Dr. Kostas Kloukinas is a staff microelectronics engineer at CERN, Geneva, Switzerland. He has worked for a number of years in projects studying the radiation effects in microelectronic circuits where he mainly concentrated in the development of a radiation tolerant standard cell library using the IBM CMOS6SF process. He is currently working on the design of a radiation tolerant digital ASIC for a readout system of a silicon microstrip detector. He is also responsible for the development of a modular radiation tolerant SRAM utilizing the IBM CMOS6SF process. He has published a number of papers in the areas of radiation effects in submicron processes and microelectronic circuits for detectors in high-energy physics experiments. 

Last update 13-Feb. 2001.