| |
Overview
A
standard cell library has been developed using a commercial 0.25 µm, 2.5 V CMOS
technology. Radiation tolerant design techniques have been employed on layout of
the cells to achieve the total dose hardness levels required by LHC experiments.
The library consists of digital core cell elements as well as a number of I/O
pad cells. The library cells have been fully characterised and the
necessary descriptions to facilitate simulation have also been generated. The
presented library features 5 times increase in speed accompanied by 26 times
reduction in power consumption as well as an increase of 8 times in gate
densities when compared to a 0.8 µm CMOS technology.
A
design kit that supports ASIC development on the CADENCE CAE platform has been
developed. The kit offers analog and digital circuit design entry, analog
simulations based on HSPICE, digital simulations based on VERILOG and mixed
analog/digital simulations. To facilitate analog circuit design entry and
simulation a number of analog primitive cells and parameterized cells have been
prepared. The design kit offers also the capability of logic synthesis
using the SYNOPSYS design compiler as well as
the
use of the SILICON
ENSEMBLE Place and Route tool.
History
 |
1998-2000. Development of the Radiation Tolerant design kit by the
CERN MIC group. Provide support for a small number of users and assemble a
number of MPW (multi project wafers) runs.
|
 |
2000-now. The design kit is now maintained by the EUROPRACTICE
center in Rutherford Appleton lab. ASIC designers must refer to this center
for support.
|
Documentation
Links

|